生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.59 | 其他特性: | METALLURGICALLY BONDED |
应用: | GENERAL PURPOSE | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LELF-R2 |
JESD-609代码: | e0 | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最大输出电流: | 3 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5821USE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, HERMETIC SEALED, D | |
1N5822 | GULFSEMI |
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SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 40V CURRENT: 3.0A | |
1N5822 | PFS |
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SCHOTTKY BARRIER RECTIFIER | |
1N5822 | DACHANG |
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PLASTIC SCHOTTKY BARRIER RECTIFIER | |
1N5822 | NJSEMI |
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SCHOTTKY BARRIER RECTIFIERS | |
1N5822 | SYNSEMI |
获取价格 |
SCHOTTKY BARRIER RECTIFIER DIODES | |
1N5822 | TYSEMI |
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High current capability ,low forward voltage drop Low Power Loss, High Efficiency | |
1N5822 | GXELECTRONICS |
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SCHOTTKY BARRIER RECTIFLER | |
1N5822 | SHUNYE |
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SCHOTTKY BARRIER RECTIFIER | |
1N5822 | JINANJINGHENG |
获取价格 |
SCHOTTKY BARRIER RECTIFIER |