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1N5822 PDF预览

1N5822

更新时间: 2024-01-22 03:14:33
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 48K
描述
3 Amp Schottky Barrier Rectifier 20 - 40 Volts

1N5822 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:HERMETIC SEALED, D5B, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.63Is Samacsys:N
其他特性:METALLURGICALLY BONDED应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5822 数据手册

 浏览型号1N5822的Datasheet PDF文件第2页浏览型号1N5822的Datasheet PDF文件第3页 
M C C  
1N5820  
THRU  
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ꢍꢎꢍꢏꢎꢅꢐꢑꢉꢒꢂꢉꢅꢓꢑꢌ  
ꢆꢔꢉꢑꢒꢕꢄꢃꢑꢔꢖꢅꢆꢗꢅꢘꢎꢙꢎꢎ  
ꢚꢔꢄꢛꢈꢜꢅꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢙ  
$ꢉ%ꢜꢅ   ꢝꢞꢎꢞ ꢅ!ꢏꢎ"#ꢘꢙꢘ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1N5822  
Features  
·
·
·
·
Low Switching Noise  
3 Amp Schottky  
Barrier Rectifier  
20 - 40 Volts  
Low Forward Voltage Drop  
High Current Capability  
High Surge Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 28°C/W Junction To Ambient  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5820  
1N5821  
1N5822  
---  
---  
---  
14V  
21V  
28V  
20V  
30V  
40V  
30V  
40V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 85°C  
Peak Forward Surge  
Current  
IFSM  
80A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
1N5820  
1N5821  
1N5822  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
.475V  
.500V  
.525V  
IFM = 3.0A;  
TJ = 25°C*  
DIMENSIONS  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
IR  
2.0mA  
20mA  
TJ = 25°C  
TJ = 100°C  
1.20  
25.40  
Typical Junction  
Capacitance  
CJ  
200pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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