Datasheet > 1N5822

1N5822

更新时间： 2024-11-06 06:20:23

品牌	Logo	应用领域
顺烨 - SHUNYE		二极管
页数	文件大小	规格书
2页	233K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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1N5822 数据手册

1N5820 THRU 1N5822

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes

DO-201AD

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

1.0 (25.4)

MIN.

Metal silicon junction,majority carrier conduction

Guardring for overvoltage protection

0.210(5.3)

0.190 (4.8)

DIA.

Low power loss,high erriciency

High current capability,low forward voltage drop

High surge capability

For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications

High temperature soldering guaranteed:

0.375 (9.50)

0.285(7.20)

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.052(1.32)

0.048(1.22)

DIA.

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Dimensions in inches and (millimeters)

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.

SYMBOLS

1N5820

1N5821

1N5822

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TL=95 C

Peak forward surge current

I(AV)

3.0

Amps

IFSM

80.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.475

0.500

0.525

Maximum instantaneous forward voltage at 3.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

2.0

40.0

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

300.0

40.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +125

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

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与1N5822相关器件

型号	品牌	获取价格	描述	数据表
1N5822/1-E3	VISHAY	获取价格	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/23	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/4E-E3	VISHAY	获取价格	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/4F	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/4G	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/4G-E3	VISHAY	获取价格	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/4H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/51	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC
1N5822/51-E3	VISHAY	获取价格	DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5822/54	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, PLASTIC

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