5秒后页面跳转
1N5807 PDF预览

1N5807

更新时间: 2024-02-14 18:51:13
品牌 Logo 应用领域
EIC 整流二极管快速恢复二极管
页数 文件大小 规格书
2页 93K
描述
ULTRAFAST RECOVERY RECTIFIER DIODES

1N5807 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.17
Is Samacsys:N其他特性:HIGH RELIABILITY, METALLURGICALLY BONDED
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:50 V
最大反向恢复时间:0.03 µs表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

1N5807 数据手册

 浏览型号1N5807的Datasheet PDF文件第2页 
Certificate : TH97/10561QM  
Certificate : TW00/17276EM  
ULTRAFAST RECOVERY  
RECTIFIER DIODES  
1N5807 - 1N5811  
PRV : 50 - 150 Volts  
Io : 6.0 Amperes  
D2A  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.161 (4.1)  
MIN.  
0.154 (3.9)  
* Low reverse current  
* Low forward voltage drop  
* Ultrafast recovery time  
* Pb / RoHS Free  
0.284 (7.2)  
0.268 (6.8)  
1.00 (25.4)  
0.040 (1.02)  
0.0385 (0.98)  
MIN.  
MECHANICAL DATA :  
* Case : D2A Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.645 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
RATING  
1N5807  
1N5809  
1N5811  
SYMBOL  
UNIT  
VRWM  
Maximum Working Peak Reverse Voltage  
Minimum Breakdown Voltage @ 100µA  
Maximum Average Forward Current  
50  
60  
100  
110  
6.0 (1)  
3.0 (2)  
150  
160  
V
V
VBR(Min)  
IF(AV)  
A
Maximum Forward Surge Current (3)  
IFSM  
VF  
125  
A
V
Maximum Peak Forward Voltage at IF = 4.0 A.  
0.875  
5.0  
Maximum Reverse Current at VRWM  
IR  
Ta = 25 °C  
μA  
IR(H)  
Trr  
Ta = 100 °C  
150  
Maximum Reverse Recovery Time (4)  
Thermal Resistance, Junction to Lead  
Junction Temperature Range  
30  
ns  
°C/W  
°C  
RӨJL  
TJ  
22  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
°C  
Notes :  
(1) Rated at TL=75 °C at 3/8 inc lead length. Derate at 60 mA/°C for TL above 75 °C.  
(2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting  
point to ambient is sufficiently controlled where TJ(max) dose not exceed 175 °C.  
(3) Ta = 25 °C @ IF(AV) = 3A and VRWM for ten 8.3 ms surges at 1 minute intervals.  
(4) IF = 1A, IRM = 1A, IR(REC) = 0.1 A and di/dt = 10 A/μs min.  
Page 1 of 2  
Rev. 00 : April 4, 2007  

与1N5807相关器件

型号 品牌 描述 获取价格 数据表
1N5807_10 SENSITRON HERMETIC AXIAL / MELF HIGH EFFICIENCY RECTIFIER

获取价格

1N5807_10 MICROSEMI VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

获取价格

1N5807CB MICROSEMI VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

获取价格

1N5807CBUS MICROSEMI SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

获取价格

1N5807S SENSITRON Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,

获取价格

1N5807U SENSITRON Rectifier Diode, 1 Element, 6A, 50V V(RRM),

获取价格