1N5807CB thru 1N5811CB
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/742 and
is ideal for high-reliability applications where a failure cannot be tolerated. These industry-
recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts
are hermetically sealed with voidless-glass construction using an internal “Category III”
metallurgical bond. These devices are also available in surface mount MELF package
configurations by adding a “US” suffix (see separate data sheet for 1N5807CBUS thru
1N5811CBUS). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including standard, fast
and ultrafast device types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5807 to 1N5811 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category III” Metallurgical bonds
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
• Ultrafast recovery 6 Amp rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Further screening options are available for JANS in
• Controlled avalanche with peak reverse power
accordance with MIL-PRF-19500/742 by using a “SP” prefix
capability
• Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate data
sheet for 1N5807CBUS thru 1N5811CBUS)
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified Forward Current (IO): 6 A @ TL = 75ºC
at 3/8 inch lead length (see note 1)
•
•
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper.
•
•
•
•
•
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
• Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Capacitance: 60 pF at 10 volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN AVERAGE
AVERAGE
RECTIFIED RECTIFIED
CURRENT CURRENT
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
PEAK
REVERSE
VOLTAGE
VOLTAGE
(MIN.)
@ 100μA
TYPE
I
O1
I
@ V
I
FSM
(NOTE 3)
O2
RWM
V
t
rr
IR
V
@TL=75ºC
(Note 1)
AMPS
@TA=55ºC
Note 2
RWM
BR
VOLTS
VOLTS
VOLTS
AMPS
ns
μA
25oC
0.875
0.875
0.875
100oC 25oC 125oC
0.800
0.800
0.800
1N5807CB
1N5809CB
1N5811CB
50
100
150
60
110
160
6.0
6.0
6.0
3.0
3.0
3.0
5
5
5
525
525
525
125
125
125
30
30
30
NOTE 1: Rated at TL = 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for TL above 75ºC.
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
does not exceed 175ºC
)
J(max
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
Copyright © 2008
2-25-2008 REV A
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503