Datasheet > 1N5807US

1N5807US

更新时间： 2024-09-24 06:18:07

品牌	Logo	应用领域
商升特 - SEMTECH		二极管快恢复二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	110K
描述
Superfast Recovery Diodes Surface Mount (US)

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中文翻译

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数据手册

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1N5807US 数据手册

1N5807US/1N5809US/1N5811US

Superfast Recovery Diodes

Surface Mount (US)

POWER DISCRETES

Description

Features

Quick reference data

Very low reverse recovery time

Hermetically sealed non-cavity construction

Soft, non-snap, off recovery characteristics

Very low forward voltage drop

V_R50 -150 V

I_F1N5807US to 1N5811US = 6A

t_rr1N5807US to 1N5811US = 30nS

I_R1N5807US to 1N5811US = 5µA

These products are qualified to MIL-PRF-19500/477

and are preferred parts as listed in MIL-HDBK-5961.

They can be supplied fully released as JANTX and

JANTXV versions.

Electrical Specifications

Electrical specifications @ T_A= 25°C unless otherwise specified.

Symbol

V_RWM

V_RRM

1N5807US

1N5809US

1N5811US

Units

Working Reverse Voltage

Repetitive Reverse Voltage

100

150

Average Forward Current

I_F(AV)

6.0

(@ 75°C lead length = 0.375')

Repetitive Surge Current

I_FRM

(@ 55°C in free air lead length = 0.375')

Non-Repetitive Surge Current

I_FSM

125

(tp = 8.3mS @ Vr & T_JMAX

)

Storage Temperature Range

T_STG

-65 to +175

°C

Average Forward Current Max

(pcb mounted: T_A= 55°C)

Sine wave

I_F(AV)

I²t

1.7

1.8

A²S

Square wave (d = 0.5)

I²t for fusing (t = 8.3mS) max

Forward Voltage Drop max

@ T_J= 25°C

V_F

0.875 @ 4A

Reverse Current max

@ V , T = 25°C

@ V_W^W_R^RM_M, T_J^J= 100°C

5.0

I^R_R

150

µA

Reverse Recovery Time max

(1.0A I_Fto 1.0A I_RMrecover to 0.25A I_RM(REC)

)

trr

C_J

Junction Capacitance typ

@ V_R= 5V f = 1MHz

Thermal Resistance to end cap

R_θJEC

6.5

°C/W

Revision: May 26, 2006

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