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1N5807CBUS PDF预览

1N5807CBUS

更新时间： 2024-02-17 17:09:54
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
3页 149K
描述
SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

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1N5807CBUS 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：MELF
包装说明：O-LELF-R2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.17
Is Samacsys：N其他特性：HIGH RELIABILITY, METALLURGICALLY BONDED
应用：ULTRA FAST RECOVERY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
JESD-609代码：e3最大非重复峰值正向电流：125 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM最大重复峰值反向电压：50 V
最大反向恢复时间：0.03 µs表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

1N5807CBUS 数据手册

 浏览型号1N5807CBUS的Datasheet PDF文件第2页浏览型号1N5807CBUS的Datasheet PDF文件第3页 
1N5807CBUS thru 1N5811CBUS  
SURFACE MOUNT VOIDLESS-  
HERMETICALLY-SEALED ULTRA FAST  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-  
PRF-19500/742 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse  
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using  
an internal “Category III” metallurgical bond. These devices are also available in axial-  
leaded package configurations (see separate data sheet for 1N5807CB thru 1N5811CB).  
Microsemi also offers numerous other rectifier products to meet higher and lower current  
ratings with various recovery time speed requirements including standard, fast, and  
ultrafast device types in both through-hole and surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
• Surface mount package series equivalent to the JEDEC  
•
•
•
Ultrafast recovery 6 Amp rectifier series 50 to 150V  
registered 1N5807 to 1N5811 series  
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
High forward surge current capability  
Low thermal resistance  
• Voidless-hermetically-sealed glass package  
• Extremely robust construction  
• Triple-layer passivation  
• Internal “Category III” Metallurgical bonds  
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742  
•
•
•
Controlled avalanche with peak reverse power  
capability  
• Further screening options are available for JANS in  
accordance with MIL-PRF-19500/742 by using a “SP” prefix  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
• Axial-leaded equivalents also available (see separate data  
sheet for 1N5807CB thru 1N5811CB)  
MAXIMUM RATINGS  
Operating Temperature: -65oC to +175oC.  
Storage Temperature: -65oC to +175oC.  
MECHANICAL AND PACKAGING  
•
•
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
•
TERMINALS: End caps are Copper with Tin/Lead  
(Sn/Pb) finish.  
Average Rectified Forward Current (IO): 6 Amps @ TEC  
= 75ºC End Cap temperature (see note 1)  
•
•
•
•
MARKING & POLARITY: Cathode band only  
Tape & Reel option: Standard per EIA-481-B  
Weight: 539 mg  
•
•
•
•
•
Thermal Resistance: 6.5 ºC/W junction to end cap  
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time  
Forward Surge Current (8.3 ms half sine) 125 Amps  
Capacitance: 60 pF at 10 volts, f = 1 MHz  
See package dimensions and recommended pad  
layout on last page  
Solder temperature: 260ºC for 10 s (maximum)  
ELECTRICAL CHARACTERISTICS  
WORKING BREAKDOWN  
AVERAGE  
AVERAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
@ 4 A  
(8.3 ms pulse)  
VF  
REVERSE  
CURRENT  
(MAX)  
SURGE  
CURRENT  
(MAX)  
REVERSE  
RECOVERY  
TIME (MAX)  
(NOTE 4)  
PEAK  
REVERSE  
VOLTAGE  
VOLTAGE  
(MIN.)  
@ 100μA  
RECTIFIED RECTIFIED  
CURRENT  
CURRENT  
TYPE  
I
I
@ V  
I
FSM  
O1  
O2  
RWM  
V
t
rr  
IR  
(NOTE 3)  
AMPS  
V
@TA=55ºC  
(Note 2)  
AMPS  
RWM  
BR  
@T =75ºC  
EC  
(Note 1)  
AMPS  
VOLTS  
VOLTS  
VOLTS  
ns  
μA  
25oC  
100oC 25oC 125oC  
1N5807CBUS  
1N5809CBUS  
1N5811CBUS  
50  
60  
6.0  
6.0  
6.0  
3.0  
3.0  
3.0  
0.875  
0.800  
0.800  
0.800  
5
5
5
525  
525  
525  
125  
125  
125  
30  
30  
30  
100  
110  
0.875  
0.875  
150  
160  
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC  
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC  
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals  
NOTE 4: I = 1.0 A, I  
= 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min  
RM  
F
Copyright © 2007  
7-26-2007  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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