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1N5623GP-HE3/73 PDF预览

1N5623GP-HE3/73

更新时间： 2024-11-27 08:08:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 72K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Signal Diode

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1N5623GP-HE3/73 数据手册

 浏览型号1N5623GP-HE3/73的Datasheet PDF文件第2页浏览型号1N5623GP-HE3/73的Datasheet PDF文件第3页浏览型号1N5623GP-HE3/73的Datasheet PDF文件第4页 
1N5615GP thru 1N5623GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
SUPERECTIFIER®  
DO-204AC (DO-15)  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
trr  
200 V to 1000 V  
MECHANICAL DATA  
Case: DO-204AC, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
50 A  
150 ns, 250 ns, 300 ns, 500 ns  
IR  
0.5 μA  
1.2 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
VF  
TJ max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
A
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
IFSM  
1.0  
50  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
Operating junction and  
storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number: 88522  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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