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1N5624 PDF预览

1N5624

更新时间: 2024-11-27 14:51:03
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
6页 454K
描述
3A,200V Through-Hole Rectifier-General Purpose Single

1N5624 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.27
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:E-LALF-W2
JESD-609代码:e0最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C最大输出电流:5 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5624 数据手册

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1N5624 1N5626  
1N5625 1N5627  
www.centralsemi.com  
SILICON  
DESCRIPTION:  
GLASS PASSIVATED RECTIFIERS  
5.0 AMP, 200 THRU 800 VOLT  
The CENTRAL SEMICONDUCTOR 1N5624 series  
types are silicon rectifiers mounted in a hermetically  
sealed, glass passivated package, designed for general  
purpose applications where high reliablility is required.  
MARKING: FULL PART NUMBER  
GPR-4AM CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL 1N5624 1N5625 1N5626 1N5627 UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
400  
400  
280  
600  
600  
420  
800  
800  
560  
V
RRM  
V
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =75°C)  
I
3.0  
5.0  
100  
A
A
O
O
Average Forward Current  
I
A
Peak Forward Surge Current, tp=8.3ms  
Operating and Storage Junction Temperature  
I
A
FSM  
T , T  
-65 to +200  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =Rated V  
MIN  
MAX  
5.0  
UNITS  
μA  
I
R
R
RRM  
V
I =3.0A  
1.0  
V
F
F
R1 (9-April 2013)  

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