1N5406-T3

更新时间： 2024-11-19 22:38:07

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	41K
描述
3.0A SILICON RECTIFIER

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中文翻译

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数据手册

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1N5406-T3 数据手册

WTE

PO WER SEMICONDUCTORS

1N5400 – 1N5408

3.0A SILICON RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

DO-201AD

Min

Dim

Max

—

25.4

8.50

9.50

1.30

5.60

1.20

Marking: Type Number

Epoxy: UL 94V-O rate flame retardant

5.0

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

5400

5401

5402

5404

5406

5407

5408

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

3.0

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

200

1.0

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

µA

Peak Reverse Current

@T_A= 25°C

5.0

100

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 2)

C^j

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1N5400 – 1N5408

1 of 3

12 3

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