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1N5406T-G PDF预览

1N5406T-G

更新时间: 2024-11-20 13:03:39
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
2页 42K
描述
Rectifier Diode,

1N5406T-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向电流:5 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5406T-G 数据手册

 浏览型号1N5406T-G的Datasheet PDF文件第2页 
3.0A Rectifier  
CCOOMMCCHHIIPP  
www.comchiptech.com  
1N5400 thru 1N5408  
DO-201AD  
Reverse Voltage: 50 to 1000V  
Forward Current: 3.0A  
Features  
- Diffused Junction  
1.0 (25.4)  
Min.  
0.189 (4.8)  
0.209 (5.3)  
Dia.  
- High Current Capability and Low Forward  
Voltage Drop  
- Surge Overload Rating to 200APeak  
- Low Reverse Leakage Current  
- Plastic Material: UL Flammability  
Classification Rating 94V-0  
0.284 (7.2)  
0.374 (9.5)  
Mechanical Data  
1.0 (25.4)  
Min.  
- Case: DO-201AD, Molded Plastic  
- Terminals: Solderable per MIL-STD-202,  
Method 208  
0.047 (1.2)  
0.051 (1.3)  
Dia.  
- Polarity: Cathode Band  
- Weight: 1.1 grams (approx.)  
Dimensions in inches and (millimeters)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
5400  
1N  
5401  
1N  
5402  
1N  
5404  
1N  
5406  
1N  
5407  
1N  
5408  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
3.0  
V
A
Average Rectified Output Current  
@ TA = 105°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
IFSM  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
200  
1.0  
A
Forward Voltage  
@ IF = 3.0A  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 150°C  
10  
100  
mA  
Cj  
Typical Junction Capacitance  
(Note 2)  
50  
25  
pF  
K/W  
°C  
RqJA  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
15  
Tj, TSTG  
-65 to +150  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
Page 1  
MDS0312006A  

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