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1N5407 PDF预览

1N5407

更新时间： 2024-11-20 06:25:07
品牌 Logo 应用领域
DIOTECH 二极管
页数 文件大小 规格书
2页 650K
描述
GENERAL PURPOSE SILICON RECTIFIER

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1N5407 数据手册

 浏览型号1N5407的Datasheet PDF文件第2页 
1N5400 THRU 1N5408  
GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 3.0 Ampere  
FEATURES  
DO-201AD  
●
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
●
1.0 (25.4)  
MIN.  
molded plastic technique  
●
Low reverse leakage  
●
●
High forward surge current capability  
High temperature soldering guaranteed:  
0.220 (5.6)  
0.197(5.0)  
DIA.  
250 C/10 seconds,0.375  
”(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375(9.5)  
0.285(7.2)  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-201AD molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.04 ounce, 1.10 grams  
0.052 (1.3)  
0.048 (1.2)  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
1N 1N  
1N  
1N  
1N  
1N 1N  
1N  
SYMBOLS  
Characteristic  
UNITS  
5400 5401 5402 5403 5404 5405 5406 5407 5408  
50 100 200 300 400 500 600 800 1000  
35 70 140 210 280 350 420 560 700  
50 100 200 300 400 500 600 800 1000  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
V
RRM  
RMS  
V
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
3.0  
A
0.375”(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I
FSM  
200  
1.1  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
V
F
Maximum instantaneous forward voltage at 3.0A  
V
Maximum DC reverse current  
at rated DC blocking voltage  
T
A
=25 C  
5.0  
100  
µA  
I
R
T
A=100 C  
Typical junction capacitance (NOTE 1)  
C
J
pF  
C/W  
C
30.0  
20.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
R
JA  
TJ,TSTG  
-65 to +150  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted  
12

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/4F VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/4H-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/51 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/51-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/53 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/53-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/54 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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