Datasheet > 1N5407

1N5407

更新时间： 2024-09-16 05:57:19

品牌	Logo	应用领域
顺烨 - SHUNYE		二极管
页数	文件大小	规格书
2页	232K
描述
GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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1N5407 数据手册

1N5400 THRU 1N5408

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

FEATURES

DO-201AD

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

1.0 (25.4)

MIN.

0.220 (5.6)

0.197(5.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.375(9.5)

0.285(7.2)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.04 ounce, 1.10 grams

0.052 (1.3)

0.048 (1.2)

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

1N 1N

SYMBOLS

UNITS

5400 5401 5402 5403 5404 5405 5406 5407 5408

Maximum repetitive peak reverse voltage

Maximum RMS voltage

50 100 200 300 400 500 600 800 1000 VOLTS

35 70 140 210 280 350 420 560 700 VOLTS

50 100 200 300 400 500 600 800 1000 VOLTS

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

3.0

Amps

IFSM

200

1.2

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

100

TA=100 C

Typical junction capacitance (NOTE 1)

RqJA

C/W

30.0

20.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

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与1N5407相关器件

型号	品牌	获取价格	描述	数据表
1N5407(G)	LGE	获取价格	暂无描述
1N5407/4E-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/4F-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/4H-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/51	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/51-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/53-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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