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1N5407 PDF预览

1N5407

更新时间: 2024-11-24 05:56:07
品牌 Logo 应用领域
RECTRON 整流二极管
页数 文件大小 规格书
2页 27K
描述
SILICON RECTIFIER

1N5407 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:PLASTIC, DO-201AD, 2 PIN针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.08Is Samacsys:N
其他特性:HIGH CURRENT CAPABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):265
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5407 数据手册

 浏览型号1N5407的Datasheet PDF文件第2页 
1N5400  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
1N5408  
SILICON RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes  
FEATURES  
* Low cost  
* Low leakage  
* Low forward voltage drop  
* High current capability  
DO-201AD  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(
)
.052 1.3  
DIA.  
(
)
.048 1.2  
1.0 (25.4)  
MIN.  
* Weight: 1.18 grams  
.375 (9.5)  
.335 (8.5)  
(
)
.220 5.6  
DIA.  
(
)
.197 5.0  
1.0 (25.4)  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS  
V
V
RRM  
RMS  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC Blocking Voltage  
V
DC  
O
100  
1000  
Maximum Average Forward Rectified Current  
I
3.0  
Amps  
Amps  
.375” (9.5mm) lead length at TL  
= 105oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
200  
40  
Typical Junction Capacitance (Note)  
Typical Thermal Resistance  
CJ  
pF  
0C/ W  
0 C  
R θ J A  
, TSTG  
30  
T
J
-65 to + 175  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
SYMBOL  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS  
CHARACTERISTICS  
1.1  
5.0  
50  
Volts  
V
F
Maximum Instantaneous Forward Voltage at 3.0A DC  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@T  
@T  
A
A
= 25oC  
= 100oC  
uAmps  
I
R
Maximum Full Load Reverse Current Average, Full Cycle  
.375” (9.5mm) lead length at T  
= 75oC  
NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts  
30  
uAmps  
2001-5  
L
Z

1N5407 替代型号

型号 品牌 替代类型 描述 数据表
1N5407-T DIODES

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