Datasheet > 1N5407

1N5407

更新时间： 2024-11-06 06:22:51

品牌	Logo	应用领域
SYNSEMI		整流二极管
页数	文件大小	规格书
2页	36K
描述
SILICON RECTIFIER DIODES

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中文翻译

获取价格

数据手册

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1N5407 数据手册

SILICON RECTIFIER DIODES

DO - 201AD

1N5400 - 1N5408

PRV : 50 - 1000 Volts

Io : 3.0 Amperes

FEATURES :

1.00 (25.4)

* High current capability

* High surge current capability

* High reliability

0.21 (5.33)

MIN.

0.19 (4.83)

0.375 (9.53)

0.285 (7.24)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

1.00 (25.4)

0.052 (1.32)

MIN.

MECHANICAL DATA :

0.048 (1.22)

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.929 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie.

Single phase, half wave, 60 Hz, resistive or inductive load

For capacitive load, derate current by 20%

RATING

SYMBOL

UNIT

5400 5401 5402 5403 5404 5405 5406 5407 5408

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V^RRM

V^RMS

V^DC

100

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

800 1000

560 700

800 1000

Maximum DC Blocking Voltage

100

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 75 °C

Peak Forward Surge Current

3.0

I^FSM

200

8.3ms Single half sine wave Superimposed on

rated load (JEDEC Method)

1.0

5.0

Maximum Forward Voltage at I^F= 3.0 Amps.

I^R

μA

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25 °C

I^R(H)

C^J

Ta = 100 °C

μA

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

°C/W

°C

RθJA

- 65 to + 175

Storage Temperature Range

T^STG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 03 : March 31, 2005

中文翻译

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与1N5407相关器件

型号	品牌	获取价格	描述	数据表
1N5407(G)	LGE	获取价格	暂无描述
1N5407/4E-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/4F-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/4H-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/51	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/51-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/53-E3	VISHAY	获取价格	DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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