Datasheet > 1N5407

1N5407

更新时间： 2024-11-24 06:22:47

品牌	Logo	应用领域
平伟 - PINGWEI		二极管
页数	文件大小	规格书
1页	40K
描述
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

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1N5407 数据手册

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N5400 THRU 1N5408

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：3.0A

FEATURES

·High reliability

DO-27

·Low leakage

·Low forward voltage drop

·High current capability

1.0(25.4)

MIN.

.052(1.3)

.048(1.2)

DIA.

.375(9.5)

.335(8.5)

.220(5.6)

.187(5.0)

DIA.

MECHANICAL DATA

1.0(25.4)

MIN.

·Case: Molded plastic

·Epoxy: UL94V-0 rate flame retardant

·Lead: MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color band denotes cathode end

·Mounting position: Any

Dimensions in inches and (millimeters)

·Weight: 1.18 grams

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 units

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

.375”(9.5mm) lead length at T_L=75°C

I_o

3.0

150

1.1

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_FSM

Maximum Instantaneous forward Voltage at 3.0A

V_F

5.0

@ T_A=25°C

Maximum DC Reverse Current

at Rated DC Blocking Voltage

500

@ T_A=100°C

I_R

µA

Maximum Full Load Reverse Current Average,

Full Cycle .375”(9.5mm) lead length at T_L=75°C

C_J

Typical Junction Capacitance (Note)

Typical Thermal Resistance

R_θJA

°C/W

Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts

１

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1N5407/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
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