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1N5406-T3-LF PDF预览

1N5406-T3-LF

更新时间: 2024-11-06 13:03:39
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
4页 48K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N5406-T3-LF 数据手册

 浏览型号1N5406-T3-LF的Datasheet PDF文件第2页浏览型号1N5406-T3-LF的Datasheet PDF文件第3页浏览型号1N5406-T3-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
1N5400 – 1N5408  
3.0A STANDARD DIODE  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
!
!
!
!
!
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
5400  
1N  
5401  
1N  
5402  
1N  
5404  
1N  
5406  
1N  
5407  
1N  
5408  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
3.0  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
200  
1.0  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
V
µA  
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
At Rated DC Blocking Voltage @TA = 100°C  
Typical Junction Capacitance (Note 2)  
Cj  
50  
20  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
RJA  
°C/W  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
1N5400 – 1N5408  
1 of 4  
© 2006 Won-Top Electronics  

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