Datasheet > 1N4448HWT_09

1N4448HWT_09

更新时间： 2024-09-21 07:21:15

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
4页	88K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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中文翻译

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1N4448HWT_09 数据手册

1N4448HWT

SURFACE MOUNT FAST SWITCHING DIODE

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Mechanical Data

Features

•

Fast Switching Speed

•

Case: SOD-523

Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: Cathode Band

Terminals: Solderable per MIL-STD-202, Method 208

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

Lead Free by Design/RoHS Compliant (Note 1)

"Green" Device (Notes 3 and 4)

•

Lead Free Plating (Matte Tin Finish) annealed over Alloy 42

leadframe.

•

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.002 grams (approximate)

SOD-523

TOP VIEW

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Symbol

V_RM

Value

100

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

250

125

I_O

2.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 2)

Symbol

P_D

Value

150

Unit

Thermal Resistance Junction to Ambient (Note 2)

Operating and Storage Temperature Range

833

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Conditions

Reverse Breakdown Voltage (Note 5)

V_(BR)R

⎯

I_R= 100μA

I_F= 5.0mA

I_F= 10mA

I_F= 100mA

I_F= 150mA

0.62

⎯

0.72

0.855

1.0

Forward Voltage

V_F

1.25

⎯

V_R= 80V

μA

100

V_R= 75V, T_J= 150°C

V_R= 25V, T_J= 150°C

V_R= 20V

Peak Reverse Current (Note 5)

I_R

⎯

Total Capacitance

3.0

4.0

C_T

t_rr

⎯

V_R= 0.5V, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. No purposefully added lead.

2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Diode's Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with date code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to date

code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

July 2009

1N4448HWT

Document number: DS30395 Rev. 8 - 2

12 3 4

中文翻译

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与1N4448HWT_09相关器件

型号	品牌	获取价格	描述	数据表
1N4448HWT-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.125A, 80V V(RRM), Silicon, GREEN, ULTRA SMALL, PLASTIC PACKA
1N4448HWT-7	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448L	BL Galaxy Electrical	获取价格	0.15A,80V,Surface Mount Small Signal Switching Diodes
1N4448M	ETC	获取价格	SMALL SIGNAL DIODE
1N4448M	RECTRON	获取价格	Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Vo
1N4448R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon,
1N4448R0	TSC	获取价格	500mW High Speed Switching Diode
1N4448S	TC	获取价格	DO-35
1N4448-T	DIODES	获取价格	FAST SWITCHING DIODE
1N4448-T	RECTRON	获取价格	Rectifier Diode, 1 Element, 100V V(RRM), Silicon, DO-35, MINIMELF-2

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