品牌 | Logo | 应用领域 |
RECTRON | / | |
页数 | 文件大小 | 规格书 |
6页 | 146K | |
描述 | ||
Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 5 uA;Recovery Time : 4 ns;Package / Case : DO-34;Mounting Style : Through Hole;Notes : IFSM@t = 1.0us |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N4448R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, | |
1N4448R0 | TSC |
获取价格 |
500mW High Speed Switching Diode | |
1N4448S | TC |
获取价格 |
DO-35 | |
1N4448-T | DIODES |
获取价格 |
FAST SWITCHING DIODE | |
1N4448-T | RECTRON |
获取价格 |
Rectifier Diode, 1 Element, 100V V(RRM), Silicon, DO-35, MINIMELF-2 | |
1N4448T/R | NXP |
获取价格 |
0.2A, 100V, SILICON, SIGNAL DIODE, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS, ALF2, SC | |
1N4448T-10A | ROHM |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, | |
1N4448T-11 | ROHM |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, | |
1N4448T11A | ROHM |
获取价格 |
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, | |
1N4448T-11A | ROHM |
获取价格 |
0.15A, 100V, SILICON, SIGNAL DIODE, DO-35 |