Datasheet > 10-FY10B2A100S7-LP26L06

10-FY10B2A100S7-LP26L06

更新时间： 2023-09-03 20:33:02

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	9014K
描述
Low collector emitter saturation voltage;High speed and smooth switching

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10-FY10B2A100S7-LP26L06

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Outer Boost Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,00167 25

4,35

5,1

5,85

1,67

1,94

2,35⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

100

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

950

µA

100

1,5

6500

139

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 100 kHz

Reverse transfer capacitance

Gate charge

230

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,74

K/W

Dynamic

92,64

94,24

94,72

8,32

t_d(on)

Turn-on delay time

125

150

t_r

Rise time

125

150

9,6

10,24

115,84

147,36

156,64

27,5

R_gon= 4 Ω

R_goff= 4 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

±15

600

t_f

125

150

54,3

67,74

0,826

0,93

Q_rFWD=0,155 µC

Q_rFWD=0,181 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

0,956

1,69

E_off

125

150

2,67

3,01

11 Nov. 2020 / Revision 1

1...3 4 567 8 9...32

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