Datasheet > 10-FY12B2A036MR-L387L18

10-FY12B2A036MR-L387L18

更新时间： 2023-09-03 20:37:39

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
22页	7289K
描述
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode

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10-FY12B2A036MR-L387L18 数据手册

10-FY12B2A036MR-L387L18

datasheet

flowBOOST 1 dual SiC

1200 V / 36 mΩ

Topology features

flow 1 12 mm housing

● Kelvin Emitter for improved switching performance

● Dual Booster

● Bypass Diode

● Integrated DC capacitor

● Temperature sensor

Component features

● Fast reverse recovery

● High speed SiC-MOSFET technology

● Low on-resistance

Housing features

● Base isolation: Al₂O₃

Schematic

● Convex shaped substrate for superior thermal contact

● Thermo-mechanical push-and-pull force relief

● Solder pin

Target applications

● Energy Storage Systems

● Solar Inverters

Types

● 10-FY12B2A036MR-L387L18

05 Aug. 2022 / Revision 2

12 3 4 5 6 7...22

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