Datasheet > 10-FY12B2A040MR02-L387L63

10-FY12B2A040MR02-L387L63

更新时间： 2023-09-03 20:25:21

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
7页	374K
描述
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode

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10-FY12B2A040MR02-L387L63 数据手册

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10-FY12B2A040MR02-L387L63

target datasheet

flowBOOST 1 dual SiC

Features

1200 V / 40 mΩ

flow 1 12mm housing

● High frequency SiC MOSFET

● Compact and low inductive design

Schematic

Target applications

● Solar

Types

● 10-FY12B2A040MR02-L387L63

Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Boost Switch

V_DSS

I_D

Drain-source voltage

1200

Drain current

T_j= T_jmax

T_s= 80 °C

I_DM

Peak drain current

t_plimited by T_jmax

T_j= T_jmax

137

P_tot

V_GSS

T_jmax

Total power dissipation

Gate-source voltage

Maximum Junction Temperature

-4/22

175

°C

25 Apr. 2016 / Revision 1

12 3 4 5 6 7

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