Datasheet > 10-FY10B2A100S7-LP26L06

10-FY10B2A100S7-LP26L06

更新时间： 2023-09-03 20:33:02

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	9014K
描述
Low collector emitter saturation voltage;High speed and smooth switching

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10-FY10B2A100S7-LP26L06

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inner Boost Diode

Static

1,51

2,03

2,13

1,8⁽¹⁾

750

V_F

I_R

Forward voltage

125

150

Reverse leakage current

V_r= 1200 V

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,9

K/W

Dynamic

31,16

30,08

29,75

9,68

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

10,47

10,5

0,155

0,181

0,063

0,073

0,072

9797

7873

7557

di/dt=7063 A/µs

di/dt=6671 A/µs

di/dt=6376 A/µs

Q_r

Recovered charge

±15

600

125

150

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

11 Nov. 2020 / Revision 1

1...4 5 678 9 10...32

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