Datasheet > 10-FY126PA032ME-L226F13

10-FY126PA032ME-L226F13

更新时间： 2024-09-19 15:19:27

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6771K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

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10-FY126PA032ME-L226F13 数据手册

10-FY126PA032ME-L226F13

datasheet

flowPACK 1 SiC

1200 V / 32 mΩ

Topology features

flow 1 12 mm housing

● 3xHalf Bridge

● Open Emitter configuration

● Kelvin Emitter for improved switching performance

● Temperature sensor

Component features

● High Blocking Voltage with low drain source on state resistance

● High speed SiC-MOSFET technology

● Resistant to Latch-up

Housing features

● Base isolation: Al₂O₃

Schematic

● Convex shaped substrate for superior thermal contact

● Thermo-mechanical push-and-pull force relief

● Solder pin

Target applications

● Elevator Drives

Types

● 10-FY126PA032ME-L226F13

22 Sep. 2023 / Revision 1

12 3 4 5 6 7...17

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