Datasheet > 10-FY07NIB200RG-LH46F68

10-FY07NIB200RG-LH46F68

更新时间： 2023-09-03 20:30:41

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
30页	3287K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FY07NIB200RG-LH46F68 数据手册

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10-FY07NIB200RG-LH46F68

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Buck Diode

Static

1,51

1,57

1,54

1,9

V_F

I_R

125

150

Forward voltage

200

Reverse leakage current

650

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

0,69

K/W

Dynamic

101

123

129

I_RRM

125

150

Peak recovery current

t_rr

Q_r

Reverse recovery time

125

150

125

150

125

150

125

150

101

di/dt = 4113 A/μs

di/dt = 3466 A/μs

di/dt = 3644 A/μs

3,920

6,700

7,669

0,562

1,221

1,433

3322

3292

3058

-5 / 15

350

120

Recovered charge

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

05 Aug. 2019 / Revision 1

1 2 3 456 7 8...30

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