Datasheet > 10-FY07NIB200RG-LH46F68

10-FY07NIB200RG-LH46F68

更新时间： 2024-10-29 11:12:19

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
30页	3287K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

10-FY07NIB200RG-LH46F68 数据手册

浏览型号10-FY07NIB200RG-LH46F68的Datasheet PDF文件第1页

浏览型号10-FY07NIB200RG-LH46F68的Datasheet PDF文件第2页

浏览型号10-FY07NIB200RG-LH46F68的Datasheet PDF文件第3页

浏览型号10-FY07NIB200RG-LH46F68的Datasheet PDF文件第5页

浏览型号10-FY07NIB200RG-LH46F68的Datasheet PDF文件第6页

10-FY07NIB200RG-LH46F68

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,132

200

1,50

1,65

1,69

1,9

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

µA

800

none

16800

416

C_ies

C_oes

C_res

Q_g

Output capacitance

f = 1 Mhz

Reverse transfer capacitance

Gate charge

316

400

200

564

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

0,56

K/W

Dynamic

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

125

150

125

150

125

150

177

194

200

2,861

3,544

3,809

1,789

R_gon= 4 Ω

R_goff= 4 Ω

t_d(off)

Turn-off delay time

Fall time

-5 / 15

350

120

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 3,9 μC

= 6,7 μC

= 7,7 μC

E_on

Turn-on energy (per pulse)

mWs

E_off

Turn-off energy (per pulse)

125

150

2,398

2,599

05 Aug. 2019 / Revision 1

1 2 345 6 7...30

中文翻译

下载PDF

与10-FY07NIB200RG-LH46F68相关器件

型号	品牌	获取价格	描述	数据表
10-FY07NIB200S504-LH46F58	VINCOTECH	获取价格	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt
10-FY07NMA150S5-M824F58	VINCOTECH	获取价格	High speed and smooth switching;Low gate charge;Very low collector emitter saturation volt
10-FY07NPA150SM01-L364F08	VINCOTECH	获取价格	High efficiency in hard switching and resonant topologies;High speed switching;Low gate ch
10-FY07NPA150SM02-L365F08	VINCOTECH	获取价格	High efficiency in hard switching and resonant topologies;High speed switching;Low gate ch
10-FY07NPA200SM02-L366F08	VINCOTECH	获取价格	High efficiency in hard switching and resonant topologies;High speed switching;Low gate ch
10-FY07ZAA055F7-L513B78	VINCOTECH	获取价格	Extremly low losses;Improved reverse diode commutation ruggedness;Ultra-fast body diode
10-FY07ZAB050SM-L514B08	VINCOTECH	获取价格	High integration level of Rectifier, PFC and Inverter
10-FY07ZAB050SM-L514B08-3	VINCOTECH	获取价格	High integration level of Rectifier, PFC and Inverter
10-FY07ZAB075SM-L515B08	VINCOTECH	获取价格	High integration level of Rectifier, PFC and Inverter
10-FY07ZAB075SM-L515B08-3	VINCOTECH	获取价格	High integration level of Rectifier, PFC and Inverter