Datasheet > 10-FY07NIB200RG-LH46F68

10-FY07NIB200RG-LH46F68

更新时间： 2023-09-03 20:30:41

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
30页	3287K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

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10-FY07NIB200RG-LH46F68

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Boost Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,002

150

4,2

5,8

1,10

1,08

1,09

1,45

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

µA

200

none

23250

C_ies

C_res

Q_g

f = 1 Mhz

Reverse transfer capacitance

Gate charge

520

150

872

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

0,61

K/W

Dynamic

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

125

150

125

150

125

150

R_gon= 2 Ω

R_goff= 2 Ω

292

339

347

132

102

0,577

0,670

0,779

4,526

t_d(off)

Turn-off delay time

Fall time

-5 / 15

350

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 3,3 μC

= 4,8 μC

= 5,6 μC

E_on

Turn-on energy (per pulse)

mWs

E_off

Turn-off energy (per pulse)

125

150

6,476

7,055

05 Aug. 2019 / Revision 1

1...3 4 567 8 9...30

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