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10-FY07NIB200RG-LH46F68 PDF预览

10-FY07NIB200RG-LH46F68

更新时间: 2024-10-29 11:12:19
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
30页 3287K
描述
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge

10-FY07NIB200RG-LH46F68 数据手册

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10-FY07NIB200RG-LH46F68  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
112  
800  
137  
175  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
143  
450  
155  
±20  
175  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Maximum junction temperature  
°C  
Boost Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
79  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
400  
108  
175  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Sw.Inv.Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
79  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
400  
108  
175  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Copyright Vincotech  
2
05 Aug. 2019 / Revision 1  

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