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ZXTN2010G PDF预览

ZXTN2010G

更新时间: 2024-10-30 07:42:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 134K
描述
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2010G 数据手册

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ZXTN2010G  
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BV  
= 60V : R  
= 35m ; I = 6A  
CEO  
SAT C  
DESCRIPTION  
Packaged in the SOT223 outline this new low saturation 60V NPN transistor  
offers extremely low on state losses making it ideal for use in DC-DC circuits  
and various driving and power management functions.  
FEATURES  
SOT223  
Extremely low equivalent on-resistance; RSAT = 35mV at 6A  
6 amps continuous current  
Up to 20 amps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 10 amps  
APPLICATIONS  
Emergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC Modules  
Backlight Inverters  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTN2010GTA  
ZXTN2010GTC  
7”  
12mm  
1000 units  
4000 units  
embossed  
13”  
TOP VIEW  
DEVICE MARKING  
ZXTN  
2010  
ISSUE 2 - MAY 2006  
1
SEMICONDUCTORS  

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