是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.06 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 1.81 A |
最大漏极电流 (ID): | 1.8 A | 最大漏源导通电阻: | 0.12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 806 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMN3A01FTC | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMN3A01FTC | ZETEX |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMN3A01FTC | TYSEMI |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed | |
ZXMN3A01Z | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE | |
ZXMN3A01Z_15 | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE | |
ZXMN3A01ZTA | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
ZXMN3A02N8 | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMN3A02N8 | ZETEX |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMN3A02N8TA | ZETEX |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
ZXMN3A02N8TA | DIODES |
获取价格 |
30V N-CHANNEL ENHANCEMENT MODE MOSFET |