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ZXMN3A04DN8TA PDF预览

ZXMN3A04DN8TA

更新时间: 2024-10-13 22:15:55
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
4页 58K
描述
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A04DN8TA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOIC-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.18
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):6.5 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMN3A04DN8TA 数据手册

 浏览型号ZXMN3A04DN8TA的Datasheet PDF文件第2页浏览型号ZXMN3A04DN8TA的Datasheet PDF文件第3页浏览型号ZXMN3A04DN8TA的Datasheet PDF文件第4页 
ZXMN3A04DN8  
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=30V; RDS(ON)=0.025ID=7.6A  
V
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
S O8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
Top View  
DEVICE  
REEL S IZE  
TAPE WIDTH  
QUANTITY  
PER REEL  
ZXMN3A04DN8TA  
ZXMN3A04DN8TC  
7”  
12m m  
12m m  
500 u n its  
2500 u n its  
13”  
DEVICE MARKING  
ZXMN  
3A04D  
PROVISIONAL ISSUE A - AUGUST 2001  
1

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