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ZXMN3A02N8TA PDF预览

ZXMN3A02N8TA

更新时间: 2024-01-14 01:55:20
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 178K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A02N8TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):7.3 A最大漏极电流 (ID):9 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMN3A02N8TA 数据手册

 浏览型号ZXMN3A02N8TA的Datasheet PDF文件第2页浏览型号ZXMN3A02N8TA的Datasheet PDF文件第3页浏览型号ZXMN3A02N8TA的Datasheet PDF文件第4页浏览型号ZXMN3A02N8TA的Datasheet PDF文件第5页浏览型号ZXMN3A02N8TA的Datasheet PDF文件第6页浏览型号ZXMN3A02N8TA的Datasheet PDF文件第7页 
ZXMN3A02N8  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= 30V; R  
= 0.025  
I = 9.0A  
D
DS(ON)  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
SO8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
PINOUT  
ZXMN3A02N8TA  
ZXMN3A02N8TC  
7”  
12m m  
12m m  
500 units  
13”  
2500 units  
DEVICE MARKING  
ZXMN  
3A02  
Top View  
ISSUE 4 - J ANUARY 2005  
1
S E M IC O N D U C T O R S  

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