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ZXMN3A03E6 PDF预览

ZXMN3A03E6

更新时间: 2024-10-30 07:42:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 189K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A03E6 数据手册

 浏览型号ZXMN3A03E6的Datasheet PDF文件第2页浏览型号ZXMN3A03E6的Datasheet PDF文件第3页浏览型号ZXMN3A03E6的Datasheet PDF文件第4页浏览型号ZXMN3A03E6的Datasheet PDF文件第5页浏览型号ZXMN3A03E6的Datasheet PDF文件第6页浏览型号ZXMN3A03E6的Datasheet PDF文件第7页 
ZXMN3A03E6  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure  
that combines the benefits of low on-resistance with fast switching speed. This  
makes them ideal for high efficiency, low voltage, power management  
applications.  
SOT23-6  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23-6 package  
APPLICATIONS  
DC - DC converters  
Power management functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN3A03E6TA  
ZXMN3A03E6TC  
7”  
8mm  
8mm  
3000 units  
13”  
10000 units  
DEVICE MARKING  
3A3  
Top View  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
1

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