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ZXMC10A816N8TC PDF预览

ZXMC10A816N8TC

更新时间: 2024-09-13 05:52:35
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
11页 178K
描述
100V SO8 Complementary Dual enhancement mode MOSFET

ZXMC10A816N8TC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.64
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):2.4 A最大漏极电流 (ID):1.7 A
最大漏源导通电阻:0.23 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2.6 W最大脉冲漏极电流 (IDM):9.4 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMC10A816N8TC 数据手册

 浏览型号ZXMC10A816N8TC的Datasheet PDF文件第2页浏览型号ZXMC10A816N8TC的Datasheet PDF文件第3页浏览型号ZXMC10A816N8TC的Datasheet PDF文件第4页浏览型号ZXMC10A816N8TC的Datasheet PDF文件第5页浏览型号ZXMC10A816N8TC的Datasheet PDF文件第6页浏览型号ZXMC10A816N8TC的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
ZXMC10A816N8  
100V SO8 Complementary Dual enhancement mode  
MOSFET  
Summary  
ID (A)  
TA= 25°C  
Device V(BR)DSS (V) QG (nC)  
RDS(on) ()  
0.230 @ VGS= 10V  
0.300 @ VGS= 4.5V  
0.235 @ VGS= -10V  
0.320 @ VGS= -4.5V  
2.1  
Q1  
Q2  
100  
9.2  
1.9  
-2.2  
-1.9  
-100  
16.5  
Description  
This new generation complementary dual MOSFET  
D1  
D2  
features low on-resistance achievable with low gate drive.  
Features  
G1  
G2  
100 V Complementary in SOIC package  
Low on-resistance  
S1  
S2  
Fast switching speed  
Low voltage (VGS = 4.5 V) gate drive  
Q1 N-Channel  
Q2 P-Channel  
Applications  
DC motor control  
Backlighting  
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
Class D Audio Output Stages (<100W)  
Ordering information  
Device  
Reel size Tape width Quantity  
(inches)  
(mm)  
per reel  
Top view  
ZXMC10A816N8TC  
13  
12  
2,500  
Device marking  
ZXMC  
10A816  
Issue 1.3 - March 2009  
© Diodes Incorporated 2009  
1
www.diodes.com  

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