Datasheet > ZXMC3A16DN8_05

ZXMC3A16DN8_05

更新时间： 2024-02-26 19:23:07

品牌	Logo	应用领域
捷特科 - ZETEX		/
页数	文件大小	规格书
10页	309K
描述
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

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中文翻译

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ZXMC3A16DN8_05 数据手册

ZXMC3A16DN8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY

N-Channel V_(BR)DSS= 30V; R_DS(ON)= 0.035 ; I_D= 6.4A

P-Channel V_(BR)DSS= -30V; R_DS(ON)= 0.048 ; I_D= -5.4A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management

applications.

FEATURES

SO8

•

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Low profile SOIC package

APPLICATIONS

•

Motor Drive

LCD backlighting

Q1 = N-CHANNEL

Q2 = P-CHANNEL

ORDERING INFORMATION

DEVICE

REEL

TAPE

WIDTH

QUANTITY

PER REEL

ZXMC3A16DN8TA

ZXMC3A16DN8TC

7’‘

12mm

500 units

PINOUT

13’‘

2500 units

DEVICE MARKING

ZXMC

3A16

Top view

ISSUE 1 - OCTOBER 2005

12 3 4 5 6 7...10

中文翻译

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