Datasheet > ZVN4306G(3)

ZVN4306G(3)

更新时间： 2024-11-30 23:36:03

品牌	Logo	应用领域
捷特科 - ZETEX		/
页数	文件大小	规格书
2页	35K
描述

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数据手册

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ZVN4306G(3) 数据手册

SOT223 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVN4306G

ISSUE 3 - OCTOBER 1995

FEATURES

Very low R_DS(ON)= .33Ω

APPLICATIONS

DC - DC Converters

Solenoids/Relay Drivers for Autom otive

PARTMARKING DETAIL -

ZVN4306

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

UNIT

Drain-Source Voltage

Continuous Drain Current at T_{am b}=25°C

Pulsed Drain Current

I_D

2.1

I_DM

± 20

Gate Source Voltage

V_GS

Power Dissipation at T_{am b}=25°C

Operating and Storage Tem perature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

°C

T_j:T_stg

-55 to +150

= 25°C unless otherw ise stated).

am b

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BV_DSS

I_D=1m A, V_GS=0V

I_D=1m A, V_DS= V_GS

Gate-Source Threshold V_GS(th)

Voltage

1.3

Gate-Body Leakage

I_GSS

I_DSS

_GS=± 20V, V_DS=0V

V_DS=60V, V_GS=0V

_DS=48V, V_GS=0V, T=125°C(2)

Zero Gate Voltage

Drain Current

100

µA

On-State Drain

Current(1)

I_D(on)

R_DS(on)

g_fs

V_DS=10V, V_GS=10V

Static Drain-Source

On-State Resistance (1)

0.22

0.32

0.33

0.45

V_GS=10V, I_D=3A

V_GS=5V, I_D=1.5A

Ω

Forward

0.7

V_DS=25V,I_D=3A

Transconductance (1)

Input Capacitance (2)

C_iss

350

140

Comm on Source

C_oss

V_DS=25 V, V_GS=0V, f=1MHz

Output Capacitance (2)

Reverse Transfer

Capacitance (2)

C_rss

Turn-On Delay Tim e

(2)(3)

t_d(on)

V_DD≈25V, V_GEN=10V, I_D=3A

Rise Tim e (2)(3)

t_r

Turn-Off Delay Tim e

(2)(3)

t_d(off)

Fall Tim e (2)(3)

t_f

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.

(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator

Spice param eter data is available upon request for this device

3 - 411

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