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ZTX605K PDF预览

ZTX605K

更新时间: 2024-11-06 13:16:15
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ZTX605K 数据手册

 浏览型号ZTX605K的Datasheet PDF文件第2页浏览型号ZTX605K的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 1 – MARCH 94  
ZTX604  
ZTX605  
FEATURES  
*
*
*
*
120 Volt VCEO  
1 Amp continuous current  
Gain of 2K at IC=1 Amp  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX604  
120  
ZTX605  
140  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
100  
120  
10  
4
Peak Pulse Current  
Continuous Collector Current  
IC  
1
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
ZTX604  
ZTX605  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
100  
10  
140  
120  
10  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.01  
10  
V
CB=100V  
CB=120V  
VCB=100V,T =100°C  
CB=120V,T =100°C  
µA  
µA  
µA  
µA  
0.01  
V
10  
V
Emitter Cut-Off  
Current  
IEBO  
0.1  
10  
0.1  
VEB=8V  
µA  
Colllector-Emitter  
Cut-Off Current  
ICES  
VCES=100V  
VCES=120V  
µA  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
1.0  
1.5  
1.0  
1.5  
V
V
IC=250mA, IB=0.25mA*  
IC=1A, IB=1mA*  
Base-Emitter  
Saturation Voltage  
1.8  
1.8  
V
IC=1A, IB=1mA*  
Base-Emitter  
Turn-On Voltage  
1.7  
1.7  
V
IC=1A, VCE=5V*  
3-212  

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