Datasheet > ZTX618STOA

ZTX618STOA

更新时间： 2024-10-30 19:08:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	198K
描述
Transistor

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技术参数
数据手册

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ZTX618STOA 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

ZTX618STOA 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 2 JULY 1995

ZTX618

FEATURES

10A Peak pulse current

Excellent h_FEcharacteristics up to10A (pulsed)

Extremely low saturation voltage e.g. 7mV typ.

I_Ccont 3.5A

APPLICATIONS

Power MOSFET gate driver in conjunction with

complementary ZTX718

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

3.5

I_B

500

°C

Practical Power Dissipation*

Power Dissipation

P_totp

P_tot

1.5

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

12 3 4

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