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ZTX614

更新时间: 2024-11-18 07:42:51
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
1页 38K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

ZTX614 数据手册

  
NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTOR  
ISSUE 1 – APRIL 94  
ZTX614  
FEATURES  
*
*
*
*
100 Volt VCEO  
800 mA continuous current  
Gain of 10K at IC=500mA  
Ptot=1 Watt  
C
B
E
REFER TO BCX38 FOR GRAPHS  
E-line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
100  
10  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
800  
mA  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1.0  
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 120  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
IC=10µA, IE=0  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) 100  
V
IC=10mA, IB=0*  
IE=10µA, IC=0  
VCB=60V, IE=0  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
10  
V
Collector Cut-Off  
Current  
ICBO  
100  
nA  
Emitter Cut-Off Current IEBO  
100  
nA  
V
VEB=8V, IC=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
1.25  
IC=800mA, IB=8mA*  
Base-Emitter  
Turn-On Voltage  
VBE(on)  
1.8  
V
IC=800mA, VCE=5V*  
Static Forward Current hFE  
Transfer Ratio  
5000  
10000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle 2%  
3-215  

ZTX614 替代型号

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