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ZTX618 PDF预览

ZTX618

更新时间: 2024-11-20 22:34:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管局域网
页数 文件大小 规格书
4页 150K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX618 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:E-LINE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.37Is Samacsys:N
最大集电极电流 (IC):3.5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSIP-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

ZTX618 数据手册

 浏览型号ZTX618的Datasheet PDF文件第2页浏览型号ZTX618的Datasheet PDF文件第3页浏览型号ZTX618的Datasheet PDF文件第4页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 2 – JULY 1995  
ZTX618  
FEATURES  
*
*
*
*
10A Peak pulse current  
Excellent hFE characteristics up to10A (pulsed)  
Extremely low saturation voltage e.g. 7mV typ.  
IC cont 3.5A  
C
B
E
APPLICATIONS  
*
Power MOSFET gate driver in conjunction with  
complementary ZTX718  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
20  
20  
V
5
V
Peak Pulse Current  
10  
A
Continuous Collector Current  
Base Current  
IC  
3.5  
A
IB  
500  
mA  
W
W
°C  
Practical Power Dissipation*  
Power Dissipation  
Ptotp  
Ptot  
1.5  
1
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  

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