Datasheet > ZTX649STOB

ZTX649STOB

更新时间： 2024-10-30 20:08:47

品牌	Logo	应用领域
美台 - DIODES		开关晶体管
页数	文件大小	规格书
3页	84K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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ZTX649STOB 技术参数

生命周期：	Active	零件包装代码：	TO-92
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

ZTX649STOB 数据手册

NPN SILICON PLANAR

ZTX649

MEDIUM POWER TRANSISTOR

ISSUE 2 APRIL 94

FEATURES

25 Volt V_CEO

2 Amp continuous current

Low saturation voltage

P_tot=1 Watt

APPLICATIONS

Motor driver

E-Line

DC-DC converters

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

I_C

Power Dissipation at T_amb=25°C

derate above 25°C

P_tot

5.7

mW/ °C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO35

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=100µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO25

I_C=10mA*

Emitter-Base

Breakdown Voltage

V_(BR)EBO

I_CBO

I_E=100µA

Collector Cut-Off

Current

0.1

V_CB=30V

V_CB=30V,T

µA

=100°C

Emitter Cut-Off Current I_EBO

0.1

V_EB=4V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

0.12

0.23

0.3

0.5

I_C=1A, I_B=100mA*

I_C=2A, I_B=200mA*

Base-Emitter

Saturation Voltage

0.9

1.25

I_C=1A, I_B=100mA*

Base-Emitter

Turn-On Voltage

0.8

IC=1A, V_CE=2V*

Static Forward Current h_FE

Transfer Ratio

100

200

150

I_C=50mA, V_CE=2V*

I_C=1A, V_CE=2V*

I_C=2A, V_CE=2V*

I_C=6A, V_CE=2V*

300

Transition Frequency

f_T

150

240

MHz

I_C=100mA, V_CE=5V

f=100MHz

3-216

12 3

中文翻译

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