Datasheet > ZTX614

ZTX614

更新时间： 2024-01-20 06:45:39

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管达林顿晶体管局域网
页数	文件大小	规格书
1页	37K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

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ZTX614 数据手册

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTOR

ISSUE 1 APRIL 94

ZTX614

FEATURES

100 Volt V_CEO

800 mA continuous current

Gain of 10K at I_C=500mA

P_tot=1 Watt

REFER TO BCX38 FOR GRAPHS

E-line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

120

100

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

800

Power Dissipation at T_amb=25°C

derate above 25°C

P_tot

1.0

5.7

mW/ °C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO120

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=10µA, I_E=0

Collector-Emitter

Sustaining Voltage

V_CEO(sus)100

I_C=10mA, I_B=0*

I_E=10µA, I_C=0

V_CB=60V, I_E=0

Emitter-Base

Breakdown Voltage

V_(BR)EBO

Collector Cut-Off

Current

I_CBO

100

Emitter Cut-Off Current I_EBO

100

V_EB=8V, I_C=0

Collector-Emitter

Saturation Voltage

V_CE(sat)

1.25

I_C=800mA, I_B=8mA*

Base-Emitter

Turn-On Voltage

V_BE(on)

1.8

IC=800mA, V_CE=5V*

Static Forward Current h_FE

Transfer Ratio

5000

10000

I_C=100mA, V_CE=5V*

I_C=500mA, V_CE=5V*

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

3-215

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