FET BIAS CONTROLLER AND
POLARITY SWITCH
ISSUE 1 - FEBRUARY 1998
ZNBG3010
ZNBG3011
DEVICE DESCRIPTION
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc.
with a minimum of external components.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
With the addition of two capacitors and a
resistor, the devices provide drain voltage
and current control for three external
grounded source FETs, generating the
regulated negative rail required for FET gate
biasingwhilstoperatingfromasinglesupply.
This negative bias, at -3 volts, can also be
used to supply other external circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 1V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG3010/11 includes bias circuits to
drive up to three external FETs. A control
input to the device selects either one of two
FETs as operational, the third FET is
permanently active. This feature is
particularly used as an LNB polarisation
switch.
The ZNBG3010/11 are available in QSOP16
for the minimum in device size. Device
operating temperature is -40 to 70°C to suit
a wide range of environmental conditions.
Drain current setting of the ZNBG3010/11 is
user selectable over the range 0 to 15mA,
this is achieved with addition of a single
resistor. The series also offers the choice of
drain voltage to be set for the FETs, the
ZNBG3010 gives 2.2 volts drain whilst the
ZNBG3011 gives 2 volts.
FEATURES
APPLICATIONS
Provides bias for GaAs and HEMT FETs
Satellite receiver LNBs
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•
Drives up to three FETs
Private mobile radio (PMR)
•
•
Dynamic FET protection
Cellular telephones
•
•
Drain current set by external resistor
•
Regulated negative rail generator
requires only 2 external capacitors
•
Choice in drain voltage
•
Wide supply voltage range
•
Polarisation switch for LNBs
•
•
QSOP surface mount package
4-114