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ZNBG3113

更新时间: 2024-11-24 22:06:51
品牌 Logo 应用领域
捷特科 - ZETEX 开关控制器
页数 文件大小 规格书
17页 687K
描述
FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

ZNBG3113 数据手册

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FET BIAS CONTROLLER WITH POLARISATION  
SWITCH AND TONE DETECTION  
ISSUE 1 - OCTOBER 1998  
ZNBG3113  
ZNBG3114  
DEVICE DESCRIPTION  
Drain current setting of the ZNBG3113/14 is  
user selectable over the range 0 to 15mA, this  
is achieved with addition of a single resistor.  
The series also offers the choice of drain  
voltage to be set for the FETs, the 3113 gives  
2.2 volts drain whilst the 3114 gives 2 volts.  
The ZNBG series of devices are designed to  
meet the bias requirements of GaAs and  
HEMT FETs commonly used in satellite  
receiver LNBs, PMR cellular telephones etc.  
with a minimum of external components.  
With the addition of two capacitors and a  
resistorthedevicesprovide drainvoltageand  
current control for three external grounded  
source FETs, generating the regulated  
negative rail required for FET gate biasing  
whilst operating from a single supply. This  
negative bias, at -3 volts, can also be used to  
supply other external circuits.  
These devices are unconditionally stable  
over the full working temperature with the  
FETs in place, subject to the inclusion of the  
recommended gate and drain capacitors.  
These ensure RF stability and minimal  
injected noise.  
It is possible to use less than the devices full  
complement of FET bias controls, unused  
drain and gate connections can be left open  
circuit without affecting operation of the  
remaining bias circuits.  
The ZNBG3113/14 includes bias circuits to  
drive up to three external FETs. A control  
input to the device selects either one of two  
FETs as operational, the third FET is  
permanently active. This feature is  
particularly used as an LNB polarisation  
switch. Also specific to LNB applications is  
the 22kHz tone detection and logic output  
feature which is used to enable high and low  
band frequency switching.  
To protect the external FETs the circuits have  
been designed to ensure that, under any  
conditions including power up/down  
transients, the gate drive from the bias  
circuits cannot exceed the range -3.5V to 1V.  
Furthermore if the negative rail experiences  
a fault condition, such as overload or short  
circuit, the drain supply to the FETs will shut  
down avoiding excessive current flow.  
The facility to control the tone switching  
delay is provided. This allows the rejection  
of other lower frequency tones tat may be  
present in multiple LNB applications.  
The ZNBG3113/14 are available in QSOP20  
for the minimum in device size. Device  
operating temperature is -40 to 70°C to suit  
a wide range of environmental conditions.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
Drives up to three FETs  
Private mobile radio (PMR)  
Dynamic FET protection  
Cellular telephones  
Drain current set by external resistor  
Regulated negative rail generator  
requires only 2 external capacitors  
Choice in drain voltage  
Wide supply voltage range  
Polarisation switch for LNBs  
22KHz tone detection for band  
switching  
Programmable tone delay  
Compliant with ASTRA control  
specifications  
QSOP surface mount package  
4-123  

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