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ZNBG3110Q20 PDF预览

ZNBG3110Q20

更新时间： 2024-09-12 22:06:51
品牌 Logo 应用领域
捷特科 - ZETEX 模拟IC开关信号电路光电二极管控制器
页数 文件大小 规格书
16页 660K
描述
FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

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中文翻译

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ZNBG3110Q20 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：QSOP-20Reach Compliance Code：unknown
HTS代码：8542.39.00.01风险等级：5.05
Is Samacsys：N模拟集成电路 - 其他类型：ANALOG CIRCUIT
JESD-30 代码：R-PDSO-G20JESD-609代码：e0
长度：8.65 mm湿度敏感等级：1
功能数量：1端子数量：20
最高工作温度：70 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, SHRINK PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：1.75 mm最大供电电压 (Vsup)：10 V
最小供电电压 (Vsup)：5 V标称供电电压 (Vsup)：5 V
表面贴装：YES温度等级：OTHER
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.635 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9116 mm
Base Number Matches：1

ZNBG3110Q20 数据手册

 浏览型号ZNBG3110Q20的Datasheet PDF文件第2页浏览型号ZNBG3110Q20的Datasheet PDF文件第3页浏览型号ZNBG3110Q20的Datasheet PDF文件第4页浏览型号ZNBG3110Q20的Datasheet PDF文件第5页浏览型号ZNBG3110Q20的Datasheet PDF文件第6页浏览型号ZNBG3110Q20的Datasheet PDF文件第7页 
FET BIAS CONTROLLER WITH POLARISATION  
SWITCH AND TONE DETECTION  
ISSUE 2 - APRIL 1998  
ZNBG3110  
ZNBG3111  
DEVICE DESCRIPTION  
These devices are unconditionally stable  
over the full working temperature with the  
FETs in place, subject to the inclusion of the  
recommended gate and drain capacitors.  
These ensure RF stability and minimal  
injected noise.  
The ZNBG series of devices are designed to  
meet the bias requirements of GaAs and  
HEMT FETs commonly used in satellite  
receiver LNBs, PMR cellular telephones etc.  
with a minimum of external components.  
With the addition of two capacitors and a  
resistorthedevicesprovide drainvoltageand  
current control for three external grounded  
source FETs, generating the regulated  
negative rail required for FET gate biasing  
whilst operating from a single supply. This  
negative bias, at -3 volts, can also be used to  
supply other external circuits.  
It is possible to use less than the devices full  
complement of FET bias controls, unused  
drain and gate connections can be left open  
circuit without affecting operation of the  
remaining bias circuits.  
In order to protect the external FETs the  
circuits have been designed to ensure that,  
under any conditions including power  
up/down transients, the gate drive from the  
bias circuits cannot exceed the range -3.5V  
to 1V. Furthermore if the negative rail  
experiences a fault condition, such as  
overload or short circuit, the drain supply to  
the FETs will shut down avoiding excessive  
current flow.  
The ZNBG3110/11 includes bias circuits to  
drive up to three external FETs. A control  
input to the device selects either one of two  
FETs as operational, the third FET is  
permanently active. This feature is  
particularly used as an LNB polarisation  
switch. Also specific to LNB applications is  
the 22KHz tone detection and logic output  
feature which is used to enable high and low  
band frequency switching.  
The ZNBG3110/11 are available in QSOP20  
for the minimum in device size. Device  
operating temperature is -40 to 70°C to suit  
a wide range of environmental conditions.  
Drain current setting of the ZNBG3110/11 is  
user selectable over the range 0 to 15mA, this  
is achieved with addition of a single resistor.  
The series also offers the choice of drain  
voltage to be set for the FETs, the 3110 gives  
2.2 volts drain whilst the 3111 gives 2 volts.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
•
•
Drives up to three FETs  
Private mobile radio (PMR)  
•
•
Dynamic FET protection  
Cellular telephones  
•
•
Drain current set by external resistor  
•
Regulated negative rail generator  
requires only 2 external capacitors  
•
Choice in drain voltage  
•
Wide supply voltage range  
•
Polarisation switch for LNBs  
•
•
22KHz tone detection for band  
switching  
Compliant with ASTRA control  
specifications  
•
QSOP surface mount package  
•
4-123  
1234567...16

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