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ZNBG3010Q16TC PDF预览

ZNBG3010Q16TC

更新时间: 2024-11-25 21:01:11
品牌 Logo 应用领域
捷特科 - ZETEX 光电二极管
页数 文件大小 规格书
10页 374K
描述
Analog Circuit, 1 Func, PDSO16, QSOP-16

ZNBG3010Q16TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:QSOP-16Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.03
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:16最高工作温度:70 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压 (Vsup):10 V最小供电电压 (Vsup):5 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9116 mmBase Number Matches:1

ZNBG3010Q16TC 数据手册

 浏览型号ZNBG3010Q16TC的Datasheet PDF文件第2页浏览型号ZNBG3010Q16TC的Datasheet PDF文件第3页浏览型号ZNBG3010Q16TC的Datasheet PDF文件第4页浏览型号ZNBG3010Q16TC的Datasheet PDF文件第5页浏览型号ZNBG3010Q16TC的Datasheet PDF文件第6页浏览型号ZNBG3010Q16TC的Datasheet PDF文件第7页 
FET BIAS CONTROLLER AND  
POLARITY SWITCH  
ISSUE 1 - FEBRUARY 1998  
ZNBG3010  
ZNBG3011  
DEVICE DESCRIPTION  
These devices are unconditionally stable  
over the full working temperature with the  
FETs in place, subject to the inclusion of the  
recommended gate and drain capacitors.  
These ensure RF stability and minimal  
injected noise.  
The ZNBG series of devices are designed to  
meet the bias requirements of GaAs and  
HEMT FETs commonly used in satellite  
receiver LNBs, PMR cellular telephones etc.  
with a minimum of external components.  
It is possible to use less than the devices full  
complement of FET bias controls, unused  
drain and gate connections can be left open  
circuit without affecting operation of the  
remaining bias circuits.  
With the addition of two capacitors and a  
resistor, the devices provide drain voltage  
and current control for three external  
grounded source FETs, generating the  
regulated negative rail required for FET gate  
biasingwhilstoperatingfromasinglesupply.  
This negative bias, at -3 volts, can also be  
used to supply other external circuits.  
In order to protect the external FETs the  
circuits have been designed to ensure that,  
under any conditions including power  
up/down transients, the gate drive from the  
bias circuits cannot exceed the range -3.5V  
to 1V. Furthermore if the negative rail  
experiences a fault condition, such as  
overload or short circuit, the drain supply to  
the FETs will shut down avoiding excessive  
current flow.  
The ZNBG3010/11 includes bias circuits to  
drive up to three external FETs. A control  
input to the device selects either one of two  
FETs as operational, the third FET is  
permanently active. This feature is  
particularly used as an LNB polarisation  
switch.  
The ZNBG3010/11 are available in QSOP16  
for the minimum in device size. Device  
operating temperature is -40 to 70°C to suit  
a wide range of environmental conditions.  
Drain current setting of the ZNBG3010/11 is  
user selectable over the range 0 to 15mA,  
this is achieved with addition of a single  
resistor. The series also offers the choice of  
drain voltage to be set for the FETs, the  
ZNBG3010 gives 2.2 volts drain whilst the  
ZNBG3011 gives 2 volts.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
Drives up to three FETs  
Private mobile radio (PMR)  
Dynamic FET protection  
Cellular telephones  
Drain current set by external resistor  
Regulated negative rail generator  
requires only 2 external capacitors  
Choice in drain voltage  
Wide supply voltage range  
Polarisation switch for LNBs  
QSOP surface mount package  
4-114  

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