Datasheet > ZNBG3001

ZNBG3001

更新时间： 2024-10-30 07:43:39

品牌	Logo	应用领域
美台 - DIODES		控制器
页数	文件大小	规格书
9页	208K
描述
FET BIAS CONTROLLER

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ZNBG3001 数据手册

FET BIAS CONTROLLER

ZNBG3000

ZNBG3001

ISSUE 1- AUGUST 1998

DEVICE DESCRIPTION

It is possible to use less than the devices full

complement of FET bias controls, unused

drain and gate connections can be left open

circuit without affecting operation of the

remaining bias circuits.

The ZNBG series of devices are designed to

meet the bias requirements of GaAs and

HEMT FETs commonly used in satellite

receiver LNBs, PMR, cellular telephones etc.

with a minimum of external components.

In order to protect the external FETs the

circuits have been designed to ensure that,

under any conditions including power

up/down transients, the gate drive from the

bias circuits cannot exceed the range -3.5V

to 0.7V. Furthermore if the negative rail

experiences a fault condition, such as

overload or short circuit, the drain supply to

the FETs will shut down avoiding excessive

current flow.

With the addition of two capacitors and a

resistor the devices provide drain voltage

and current control for 3 external grounded

source FETs, generating the regulated

negative rail required for FET gate biasing

whilst operating from a single supply. This

negative bias, at -3 volts, can also be used to

supply other external circuits.

The ZNBG3000/1 contains three bias stages.

A single resistor allows FET drain current to

be set to the desired level. The series also

offers the choice of drain voltage to be set

for the FETs, the ZNBG3000 gives 2.2 volts

drain whilst the ZNBG3001 gives 2 volts.

The ZNBG3000/1 are available in QSOP16

packages for the minimum in devices size.

Device operating temperature is -40 to 70°C

to suit a wide range of environmental

conditions.

These devices are unconditionally stable

over the full working temperature with the

FETs in place, subject to the inclusion of the

recommended gate and drain capacitors.

These ensure RF stability and minimal

injected noise.

FEATURES

APPLICATIONS

Provides bias for GaAs and HEMT FETs

Satellite receiver LNBs

•

Drives up to three FETs

Private mobile radio (PMR)

•

Dynamic FET protection

Cellular telephones

•

Drain current set by external resistor

Single in single out C Band LNB

•

Regulated negative rail generator

requires only 2 external capacitors

•

Choice in drain voltage

•

Wide supply voltage range

•

QSOP surface mount package

•

4-137

12 3 4 5 6 7...9

中文翻译

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与ZNBG3001相关器件

型号	品牌	获取价格	描述	数据表
ZNBG3001Q16	ZETEX	获取价格	FET BIAS CONTROLLER
ZNBG3001Q16TA	ZETEX	获取价格	Analog Circuit, 1 Func, PDSO16, QSOP-16
ZNBG3001Q16TC	ZETEX	获取价格	Analog Circuit, 1 Func, PDSO16, QSOP-16
ZNBG3010	ZETEX	获取价格	FET BIAS CONTROLLER AND POLARITY SWITCH
ZNBG3010	DIODES	获取价格	FET BIAS CONTROLLER AND POLARITY SWITCH
ZNBG3010Q16	ZETEX	获取价格	FET BIAS CONTROLLER AND POLARITY SWITCH
ZNBG3010Q16TC	ZETEX	获取价格	Analog Circuit, 1 Func, PDSO16, QSOP-16
ZNBG3011	ZETEX	获取价格	FET BIAS CONTROLLER AND POLARITY SWITCH
ZNBG3011	DIODES	获取价格	FET BIAS CONTROLLER AND POLARITY SWITCH
ZNBG3011Q16	ZETEX	获取价格	FET BIAS CONTROLLER AND POLARITY SWITCH

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