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ZNBG3001Q16TC PDF预览

ZNBG3001Q16TC

更新时间: 2024-10-30 12:58:43
品牌 Logo 应用领域
捷特科 - ZETEX 模拟IC信号电路光电二极管控制器
页数 文件大小 规格书
9页 207K
描述
Analog Circuit, 1 Func, PDSO16, QSOP-16

ZNBG3001Q16TC 技术参数

生命周期:Transferred包装说明:SSOP,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.03Is Samacsys:N
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:16最高工作温度:70 °C
最低工作温度:-30 °C封装主体材料:PLASTIC/EPOXY
封装代码:SSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压 (Vsup):12 V最小供电电压 (Vsup):5 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:OTHER端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9116 mmBase Number Matches:1

ZNBG3001Q16TC 数据手册

 浏览型号ZNBG3001Q16TC的Datasheet PDF文件第2页浏览型号ZNBG3001Q16TC的Datasheet PDF文件第3页浏览型号ZNBG3001Q16TC的Datasheet PDF文件第4页浏览型号ZNBG3001Q16TC的Datasheet PDF文件第5页浏览型号ZNBG3001Q16TC的Datasheet PDF文件第6页浏览型号ZNBG3001Q16TC的Datasheet PDF文件第7页 
FET BIAS CONTROLLER  
ZNBG3000  
ZNBG3001  
ISSUE 1- AUGUST 1998  
DEVICE DESCRIPTION  
It is possible to use less than the devices full  
complement of FET bias controls, unused  
drain and gate connections can be left open  
circuit without affecting operation of the  
remaining bias circuits.  
The ZNBG series of devices are designed to  
meet the bias requirements of GaAs and  
HEMT FETs commonly used in satellite  
receiver LNBs, PMR, cellular telephones etc.  
with a minimum of external components.  
In order to protect the external FETs the  
circuits have been designed to ensure that,  
under any conditions including power  
up/down transients, the gate drive from the  
bias circuits cannot exceed the range -3.5V  
to 0.7V. Furthermore if the negative rail  
experiences a fault condition, such as  
overload or short circuit, the drain supply to  
the FETs will shut down avoiding excessive  
current flow.  
With the addition of two capacitors and a  
resistor the devices provide drain voltage  
and current control for 3 external grounded  
source FETs, generating the regulated  
negative rail required for FET gate biasing  
whilst operating from a single supply. This  
negative bias, at -3 volts, can also be used to  
supply other external circuits.  
The ZNBG3000/1 contains three bias stages.  
A single resistor allows FET drain current to  
be set to the desired level. The series also  
offers the choice of drain voltage to be set  
for the FETs, the ZNBG3000 gives 2.2 volts  
drain whilst the ZNBG3001 gives 2 volts.  
The ZNBG3000/1 are available in QSOP16  
packages for the minimum in devices size.  
Device operating temperature is -40 to 70°C  
to suit a wide range of environmental  
conditions.  
These devices are unconditionally stable  
over the full working temperature with the  
FETs in place, subject to the inclusion of the  
recommended gate and drain capacitors.  
These ensure RF stability and minimal  
injected noise.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
Drives up to three FETs  
Private mobile radio (PMR)  
Dynamic FET protection  
Cellular telephones  
Drain current set by external resistor  
Single in single out C Band LNB  
Regulated negative rail generator  
requires only 2 external capacitors  
Choice in drain voltage  
Wide supply voltage range  
QSOP surface mount package  
4-137  

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