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XP1050-QJ-EV1

更新时间： 2024-11-10 06:01:47
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MIMIX 放大器功率放大器
页数 文件大小 规格书
10页 624K
描述
7.0-9.0 GHz Linear Power Amplifier 6x6mm QFN

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XP1050-QJ-EV1 数据手册

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7.0-9.0 GHz Linear Power Amplifier  
6x6mm QFN  
August 2009 - Rev 31-Aug-09  
P1050-QJ  
Features  
15.0 dB Small Signal Gain  
48.0 dBm Third Order Intercept Point (OIP3)  
35.0 dBm Saturated RF Power (Psat)  
Integrated Power Detector  
6x6mm QFN Package, RoHS Compliant  
100% RF Testing  
Absolute Maximum Ratings1,2,3  
General Description  
Supply Voltage (Vd)  
Supply Voltage (Vgg)  
Supply Current (Id1)  
Supply Current (Id2)  
Detector Pin (Vdet)  
Detector Ref Pin (Vref)  
Input Power (Pin)  
Abs. Max. Junction/Channel Temp  
Max. Operating Junction/Channel Temp 160 ºC  
Continuous Power Dissipation (Pdiss) at 85 ºC 11.2 W  
Thermal Resistance (Tchannel=160 ºC) 6.8 ºC/W  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Mounting Temperature  
ESD Min. - Machine Model (MM)  
ESD Min. - Human Body Model (HBM)  
MSL Level  
(1) Operation of this device above any one of these parameters may cause  
permanent damage.  
+8.5V  
-3V  
600 mA  
1200 mA  
6V  
6V  
The XP1050-QJ is a packaged linear power amplifier  
that operates over the 7.0-9.0 GHz frequency band.  
The device provides 15.0 dB gain and 48 dBm  
Output Third Order Intercept Point (OIP3) at 28 dBm  
total output power.The packaged amplifier comes  
in an industry standard, fully molded 6x6mm QFN  
package and is comprised of a two stage power  
amplifier with an integrated, temperature  
compensated on-chip power detector.The device  
includes on-chip ESD protection structures and DC  
by-pass capacitors to ease the implementation and  
volume assembly of the packaged part.The device  
is manufactured in GaAs HFET device technology  
with BCB wafer coating to enhance ruggedness and  
repeatability of performance.The XP1050-QJ is well  
suited for Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
+25 dBm  
175 ºC  
-40 to +85 ºC  
-65 to +150 ºC  
See solder reflow profile  
Class A  
Class 1A  
MSL3  
(2) Channel temperature directly affects a device’s MTTF. Channel temperature  
should be kept as low as possible to maximize lifetime.  
(3) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <17  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Reverse Isolation (S12)  
P1dB  
Units  
GHz  
dB  
dB  
dB  
Min.  
7.0  
Typ.  
-
15.0  
10.0  
8.0  
45.0  
34.5  
35.0  
48.0  
24.0  
-
Max.  
9.0  
dB  
dBm  
dBm  
dBm  
%
dBm  
VDC  
VDC  
VDC  
mA  
Psat  
OIP3 @ 25 dBm Pout  
PAE at Psat  
Detector Power Range  
Drain Bias Voltage (Vd)  
Detector Bias Voltage (Vdet,ref)  
Gate Bias Voltage (Vg1,2,3)  
Quiescent Supply Current (Idq)  
-20.0  
-2.0  
35.0  
8.0  
5.0  
-1.0  
1400  
Page 1 of 10  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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