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XP1026-BD_10

更新时间： 2024-09-18 07:56:51
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MIMIX /
页数 文件大小 规格书
10页 1227K
描述
27.0-32.0 GHz GaAs MMIC

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XP1026-BD_10 数据手册

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27.0-32.0 GHz GaAs MMIC  
Power Amplifier  
January 2010 - Rev 25-Jan-10  
P1026-BD  
Features  
Chip Device Layout  
Ka-Band 2W Power Amplifier  
21.0 dB Small Signal Gain  
+33.0 dBm Saturated Output Power  
+40.0 dBm Output Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband's three stage 27.0-32.0 GHz GaAs  
MMIC power amplifier has a small signal gain of 21.0  
dB with +33 dBm saturated output power.This MMIC  
uses Mimix Broadband’s GaAs PHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC2  
165,415,790 mA  
+0.3 VDC  
+22 dBm  
Storage Temperature (Tstg) -65 to +165 ºC  
Operating Temperature (Ta) -55 to 85 ºC  
Channel Temperature (Tch)1 175 ºC  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
(2) Under pulsed bias conditions, under CW Psat conditions  
further reduction in max supply voltage (~0.5V) is  
recommended.  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)2  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Output Power for 1dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Saturated Output Power (Psat)2  
Drain Bias Voltage (Vd1,2,3)  
Units  
GHz  
dB  
dB  
dB  
Min.  
27.0  
-
-
-
-
-
-
Typ.  
-
Max.  
32.0  
-
-
-
-
-
-
-
10.0  
15.0  
21.0  
+/-1.0  
50.0  
+32.0  
+40.0  
+33.0  
+5.5  
-0.7  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
mA  
mA  
-
-
-
-
+5.8  
0.0  
150  
350  
750  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1) (Vd=5.5V,Vg=-0.7V Typical)  
Supply Current (Id2) (Vd=5.5V,Vg=-0.7V Typical)  
-1.2  
-
-
-
100  
250  
550  
Supply Current (Id3) (Vd=5.5V,Vg=-0.7V Typical)  
(2) Measured on wafer pulsed  
Page 1 of 10  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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